Art

J-GLOBAL ID：201902215543789979   Reference number：19A0307573

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

超低スイッチング損失の5Vゲート電圧により駆動された1200VスケールIGBTの実証【JST・京大機械翻訳】

Author (23)： Saraya T. (The University of Tokyo, Tokyo, Japan) ,  Itou K. (The University of Tokyo, Tokyo, Japan) ,  Takakura T. (The University of Tokyo, Tokyo, Japan) ,  Fukui M. (The University of Tokyo, Tokyo, Japan) ,  Suzuki S. (The University of Tokyo, Tokyo, Japan) ,  Takeuchi K. (The University of Tokyo, Tokyo, Japan) ,  Tsukuda M. (Green Electronics Research Institute, Kitakyushu, Japan) ,  Numasawa Y. (Meiji University, Kawasaki, Japan) ,  Satoh K. (Mitsubishi Electric Corp., Fukuoka, Japan) ,  Matsudai T. (Toshiba Electronic Devices & Storage Corp., Tokyo, Japan) ,  Saito W. (Toshiba Electronic Devices & Storage Corp., Tokyo, Japan) ,  Kakushima K. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Hoshii T. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Furukawa K. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Watanabe M. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Shigyo N. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Tsutsui K. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Iwai H. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Ogura A. (Meiji University, Kawasaki, Japan) ,  Nishizawa S. (Kyushu University, Fukuoka, Japan) ,  Omura I. (Kyushu Inst. of Technology, Kitakyushu, Japan) ,  Ohashi H. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Hiramoto T. (The University of Tokyo, Tokyo, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2018  Issue： IEDM  Page： 8.4.1-8.4.4  Publication year： 2018 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Functional trench-gated 1200V-...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=19A0307573&from=J-GLOBAL&jstjournalNo=W2441A") }}

Thesaurus term： *IGBT ,  *voltage ,  *switching loss ,  turn-off ,  *switching ,  blocking effect ,  three dimension
Semi thesaurus term： オン状態 ,  トレンチゲート ,  *ゲート電圧 , 【Automatic Indexing@JST】

JST classification (3)： Code theory  (ND02030R) ,  Special-purpose arithmetic and control units  (JC04030Y) ,  Speach processing  (JE05000E)

Terms in the title (5)： スイッチング損失 ,  ゲート電圧 ,  スケール ,  IGBT ,  実証