Art

J-GLOBAL ID：201902229048465830   Reference number：19A2699363

Electrical Characteristics of Ag₁₀(As₄₀S₃₀Se₃₀)₉₀ as Resistive Switching Material for Potential Application in Memory Devices

メモリデバイスにおける潜在的応用のための抵抗スイッチング材料としてのAg_10(As_40S_30Se_30)_90の電気特性【JST・京大機械翻訳】

Author (5)： Cajko K. O. (University of Novi Sad,Faculty of Sciences,Department of Physics,Trg Dositeja Obradovic ́a 4, Novi Sad,,Serbia,21000) ,  Sekulic D. L. (University of Novi Sad,Faculty of Technical Sciences,Department of Power, Electronic and Telecommunication Engineering,Trg Dositeja Obradovic ́a 6, Novi Sad,,Serbia,21000) ,  Petrovic D. M. (University of Novi Sad,Faculty of Sciences,Department of Physics,Trg Dositeja Obradovic ́a 4, Novi Sad,,Serbia,21000) ,  Ivetic T. B. (University of Novi Sad,Faculty of Sciences,Department of Physics,Trg Dositeja Obradovic ́a 4, Novi Sad,,Serbia,21000) ,  Lukic-Petrovic S. R. (University of Novi Sad,Faculty of Sciences,Department of Physics,Trg Dositeja Obradovic ́a 4, Novi Sad,,Serbia,21000)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： MIEL  Page： 173-176  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Complex four-component amorpho...

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Thesaurus term： glass ,  electrical property ,  *memory(computer) ,  chalcogenide glass ,  *electrical characteristic ,  multiplex ,  *switching ,  amorphous state ,  quenching(cooling) ,  filament ,  memory element ,  semiconductor
Semi thesaurus term： 周囲温度 ,  両極性 ,  *抵抗スイッチング , 【Automatic Indexing@JST】

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (4)： メモリデバイス ,  応用 ,  抵抗スイッチング ,  電気特性