Art

J-GLOBAL ID：201902231407882071   Reference number：19A0016653

Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique

室温および3D適合電子ドーピング技術としてのワイドギャップ酸化物半導体の水素化【JST・京大機械翻訳】

Author (6)： Yajima T. (Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan) ,  Oike G. (Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan) ,  Yamaguchi S. (Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan) ,  Miyoshi S. (Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan) ,  Nishimura T. (Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan) ,  Toriumi A. (Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan)
Material： AIP Advances (Web)
Volume： 8  Issue： 11  Page： 115133-115133-7  Publication year： 2018 
JST Material Number： U7121A  ISSN： 2158-3226  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： A hydrogen atom, characterized...

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Thesaurus term： photolithography ,  *hydrogenation ,  diffusion coefficient ,  thin film ,  *Hydrogen ,  donor ,  impurity ,  Electrochemistry ,  *oxide ,  interface (surface) ,  characterization ,  *three dimension ,  grain boundary ,  transistor ,  solar cell

JST classification (1)： Oxide thin films  (BK14050P)

Terms in the title (6)： 室温 ,  3D ,  電子ドーピング ,  ギャップ ,  酸化物半導体 ,  水素化