Art

J-GLOBAL ID：201902239809718276   Reference number：19A1384915

Material design of oxide-semiconductor/group-IV-semiconductor bilayer tunneling field effect transistors

オキシド-semiconductor/group-IV-半導体二重層トンネル電界効果トランジスタの材料設計【JST・京大機械翻訳】

Author (5)： Kato Kimihiko (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) ,  Matsui Hiroaki (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) ,  Tabata Hitoshi (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) ,  Takenaka Mitsuru (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) ,  Takagi Shinichi (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： EDTM  Page： 85-87  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Performance improvement of a b...

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Thesaurus term： *material design ,  amorphous state ,  electrical characteristic ,  temperature dependence ,  electric current ,  *semiconductor ,  *oxide ,  tunnel junction ,  channel ,  bilayer ,  oxide semiconductor ,  *bilayer
Semi thesaurus term： サブ閾値スイング ,  *トンネル電界効果トランジスタ , 【Automatic Indexing@JST】

JST classification (2)： Pattern recognition  (JE07000S) ,  Antennas  (ND06000M)

Terms in the title (4)： オキシド ,  二重層 ,  トンネル電界効果トランジスタ ,  材料設計