Art
J-GLOBAL ID：201902243620470617
Reference number：19A2893960
Analytical Loss Modeling for GaN-based Single-Chip Multilevel Converter Circuits
GaNによるワンチップ・マルチレベル電力変換器における損失解析モデル
Author (1)：
Material：
Issue：
EDD-19-075-086/SPC-19-161-172 電子デバイス研究会/半導体電力変換研究会
Page：
41-46
Publication year：
Nov. 28, 2019
JST Material Number：
Z0924B
Document type：
Proceedings
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
JAPANESE (JA)
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Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor integrated circuit
, Transistors
Reference (22)：
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H. Ohashi and I. Omura, ′′Role of simulation technology for the progress in power devices and their applications,′′ IEEE Trans. Electron Devices, vol. 60, no. 2, pp. 528-534, Feb. 2013.
-
M. Rose and H. J. Bergveld, ′′Integration trends in monolithic power ICs: application and technology challenges,′′ IEEE J. Solid-State Circuits, vol. 51, no. 9, pp. 1965-1974, Sep. 2016.
-
D. Disney, T. Letavic, T. Trajkovic, T. Terashima, and A. Nakagawa, ′′High-voltage integrated circuits: history, state of the art, and future prospects,′′ IEEE Trans. Electron Devices, vol. 64, no. 3, pp. 659-673, Mar. 2017.
-
W. Chen, K.-Y. Wong, and K. J. Chen, ′′Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT,′′ IEEE Electron Device Lett., vol. 30, no. 5, pp. 430-432, May 2009.
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Y. Uemoto, T. Morita, A. Ikoshi, H. Umeda, H. Matsuo, J. Shimizu, M. Hikita, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, ′′GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate,′′ in IEDM Tech. Dig., 2009, p.150.
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