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J-GLOBAL ID：201902246835069714   Reference number：19A1266265

Quantum Hall devices for the primary resistance standard based on the GaAs/AlxGa[Formula : see text] As heterostructure

ヘテロ構造としてのGaAs/AlxGa[数式:原文を参照]に基づく一次抵抗標準のための量子Hall素子【JST・京大機械翻訳】

Author (5)： Wang Xueshen (Key Laboratory of the Electrical Quantum Standard of AQSIQ National Institute of Metrology (NIM), Beijing, P. R. China) ,  Zhong Qing (Key Laboratory of the Electrical Quantum Standard of AQSIQ National Institute of Metrology (NIM), Beijing, P. R. China) ,  Li Jinjin (Key Laboratory of the Electrical Quantum Standard of AQSIQ National Institute of Metrology (NIM), Beijing, P. R. China) ,  Zhong Yuan (Key Laboratory of the Electrical Quantum Standard of AQSIQ National Institute of Metrology (NIM), Beijing, P. R. China) ,  Zhao Mengke (Key Laboratory of the Electrical Quantum Standard of AQSIQ National Institute of Metrology (NIM), Beijing, P. R. China)
Material： International Journal of Modern Physics B. Condensed Matter Physics, Statiscal Physics, Applied Physics  (Int J Mod Phys B)
Volume： 33  Issue： 8  Page： 1950057  Publication year： 2019 
JST Material Number： T0396A  ISSN： 0217-9792  Document type： Article
Article type： 原著論文  Country of issue： Singapore (SGP)  Language： ENGLISH (EN)

Abstract/Point： Quantum Hall devices for prima...

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Thesaurus term： uncertainty ,  *Hall device ,  low temperature ,  standard resistor ,  *gallium arsenide
Semi thesaurus term： 電流比較器 ,  抵抗測定 ,  *ヘテロ構造 , 【Automatic Indexing@JST】

Author keywords (4)： Quantum Hall effect ,  resistance standard ,  calibration ,  resistance metrology

JST classification (2)： Mechanical properties  (YH02022L) ,  Magnetic properties of inorganic compounds  (BM06060P)

Terms in the title (7)： ヘテロ構造 ,  GaAs ,  数式 ,  参照 ,  標準 ,  量子 ,  Hall素子