Art

J-GLOBAL ID：201902257054933069   Reference number：19A1893510

Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors

溶液処理金属酸化物薄膜トランジスタの最近の進歩【JST・京大機械翻訳】

Author (5)： Xu Wangying (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen University, China) ,  Li Hao (Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China) ,  Xu Jian-Bin (Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China) ,  Wang Lei (Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China) ,  Wang Lei (Department of Applied Physics, School of Physical and Mathematical Sciences, Nanjing Tech University, China)
Material： ACS Applied Materials & Interfaces  (ACS Appl Mater Interfaces)
Volume： 10  Issue： 31  Page： 25878-25901  Publication year： 2018 
JST Material Number： W2329A  ISSN： 1944-8244  CODEN： AAMICK  Document type： Article
Article type： 文献レビュー  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Solution-processed metal oxide...

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Thesaurus term： *thin film transistor ,  dielectrics ,  low temperature ,  *metal oxide ,  complementary symmetry circuit ,  display device ,  *oxide ,  *transistor ,  oxide semiconductor ,  large area ,  *solution processing
Semi thesaurus term： 低電力エレクトロニクス ,  フレキシブルエレクトロニクス , 【Automatic Indexing@JST】

Author keywords (6)： solution-processed ,  metal oxide TFTs ,  low-temperature ,  n-type oxide semiconductors ,  oxide dielectrics ,  p-type oxide semiconductors

JST classification (1)： Transistors  (NC03070N)

Terms in the title (3)： 溶液処理 ,  金属酸化物薄膜 ,  トランジスタ