Art

J-GLOBAL ID：201902264517385213   Reference number：19A0358410

Creation of glass-characteristic point defects in crystalline SiO₂ by 2.5 MeV electrons and by fast neutrons

2.5MeV電子と高速中性子による結晶SiO_2におけるガラス特性点欠陥の生成【JST・京大機械翻訳】

Author (4)： Skuja Linards (Institute of Solid State Physics, University of Latvia, 8 Kengaraga str, LV1063 Riga, Latvia) ,  Ollier Nadege (Laboratoire des Solides Irradies Ecole Polytechnique, University of Paris-Saclay, 91128 Palaiseau, France) ,  Kajihara Koichi (Department of Applied Chemistry for Environment, Graduate School of Urban Environmental Sciences, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji, Tokyo 192-0397, Japan) ,  Smits Krisjanis (Institute of Solid State Physics, University of Latvia, 8 Kengaraga str, LV1063 Riga, Latvia)
Material： Journal of Non-Crystalline Solids  (J Non-Cryst Solid)
Volume： 505  Page： 252-259  Publication year： 2019 
JST Material Number： D0642A  ISSN： 0022-3093  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Point defects in crystalline S...

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Thesaurus term： *crystal ,  amorphous state ,  electron irradiation ,  dangling bond ,  *glass ,  amorphization ,  silica glass ,  crystal structure ,  luminescence ,  positive hole ,  quartz ,  fluence ,  nucleation ,  *point defect ,  radioactive ray

Author keywords (6)： Silica glass ,  Quartz ,  Dangling bonds ,  Electron irradiation ,  Luminescence ,  Amorphization

JST classification (3)： Luminescence of inorganic compounds  (BM08093J) ,  EPR of other inorganic compounds  (BM07023D) ,  Properties,analysis and test of glass  (YC02030Z)

Terms in the title (5)： 電子 ,  高速中性子 ,  結晶 ,  ガラス ,  欠陥