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J-GLOBAL ID：201902265817330202   Reference number：19A1473041

Electronic structure of a monoatomic [Formula : see text]Si layer on a Si(111) substrate

Si(111)基板上の単原子[数式:原文を参照]Si層の電子構造【JST・京大機械翻訳】

Author (17)： Cameau M. (Sorbonne Universite, Institut de Mineralogie, de Physique des Materiaux et de Cosmochimie (IMPMC), F-75005 Paris, France) ,  Cameau M. (Sorbonne Universite, Institut des NanoSciences de Paris (INSP), F-75005 Paris, France) ,  Yukawa R. (Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan) ,  Chen C.-H. (Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan) ,  Huang A. (Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan) ,  Ito S. (Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan) ,  Ishibiki R. (Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan) ,  Horiba K. (Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan) ,  Obata Y. (Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan) ,  Kondo T. (Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503, Japan) ,  Kondo T. (Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan) ,  Kumigashira H. (Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan) ,  Jeng H.-T. (Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan) ,  Jeng H.-T. (Physics Division, National Center for Theoretical Sciences, Hsinchu 30013, Taiwan) ,  Jeng H.-T. (Institute of Physics, Academia Sinica, Taipei 11529, Taiwan) ,  D'angelo M. (Sorbonne Universite, Institut des NanoSciences de Paris (INSP), F-75005 Paris, France) ,  Matsuda I. (Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan)
Material： Physical Review Materials
Volume： 3  Issue： 4  Page： 044004  Publication year： 2019 
JST Material Number： W3690A  ISSN： 2475-9953  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Fermi surfaces and band disper...

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Thesaurus term： Fermi surface ,  *electronic structure ,  photoemission ,  *substrate (plate) ,  synchrotron radiation ,  spectroscopy ,  interaction ,  atomic layer ,  dispersion curve ,  *single atom ,  *Silicon(111)

JST classification (3)： Electronic structure of surfaces  (BM02080J) ,  Oxide thin films  (BK14050P) ,  Electronic structure of crystalline metals  (BM02050C)

Terms in the title (6)： Si ,  単原子 ,  数式 ,  参照 ,  Si層 ,  電子構造