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J-GLOBAL ID：201902272387602636   Reference number：19A0552554

Structure and growth of Bi(110) islands on Si(111)[Formula : see text] substrates

Si(111)[数式:原文を参照]基板上のBi(110)島の構造と成長【JST・京大機械翻訳】

Author (5)： Nagase Kentaro (Department of Physics, Tokyo Institute of Technology, J1-3, 4259 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan) ,  Kokubo Ikuya (Department of Materials Science and Engineering, Tokyo Institute of Technology, J1-3, 4259 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan) ,  Yamazaki Shiro (Department of Physics, Tokyo Institute of Technology, J1-3, 4259 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan) ,  Nakatsuji Kan (Department of Materials Science and Engineering, Tokyo Institute of Technology, J1-3, 4259 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan) ,  Hirayama Hiroyuki (Department of Physics, Tokyo Institute of Technology, J1-3, 4259 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan)
Material： Physical Review. B  (Physical Review. B. Covering Condensed Matter and Materials Physics)
Volume： 97  Issue： 19  Page： 195418  Publication year： 2018 
JST Material Number： D0746A  ISSN： 2469-9950  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The structure and growth of ul...

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Thesaurus term： monolayer ,  odd number ,  scanning tunneling microscope ,  spectrum ,  terrace (geomorphology) ,  *substrate (plate) ,  even number ,  lower layer ,  nucleation ,  sandwich structure ,  unit cell ,  terrace ,  bilayer ,  atomic arrangement ,  *Silicon(111)

JST classification (1)： Metallic thin films  (BK14030T)

Terms in the title (6)： Si ,  数式 ,  参照 ,  Bi ,  島 ,  成長