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J-GLOBAL ID：201902273208930305   Reference number：19A0863036

Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure

MOVPE成長GaAs:Nδドープ超格子構造における無放射再結合中心の光ルミネセンス特性評価【JST・京大機械翻訳】

Author (7)： Haque Md Dulal (Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan) ,  Haque Md Dulal (Department of Electronics and Communication Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, 5200, Bangladesh) ,  Kamata Norihiko (Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan) ,  Islam A.Z.M. Touhidul (Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, Bangladesh) ,  Honda Zentaro (Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan) ,  Yagi Shuhei (Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan) ,  Yaguchi Hiroyuki (Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan)
Material： Optical Materials  (Opt Mater)
Volume： 89  Page： 521-527  Publication year： 2019 
JST Material Number： W0468A  ISSN： 0925-3467  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Nonradiative recombination (NR...

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Thesaurus term： density dependence ,  *delta doping ,  *MOCVD ,  *superlattice ,  quenching (light) ,  *photoluminescence ,  *gallium arsenide ,  *characterization ,  wavelength ,  conduction band ,  excitation (physics) ,  band gap ,  rate equation ,  *radiative recombination
Semi thesaurus term： 非放射再結合 , 【Automatic Indexing@JST】

Author keywords (5)： GaAs:N δ-doped superlattice ,  TWEPL ,  Nonradiative recombination centers ,  Below-gap excitation ,  Two-level model

JST classification (1)： Luminescence of semiconductors  (BM08092S)

Terms in the title (7)： MOVPE ,  成長 ,  GaAs ,  δドープ ,  超格子構造 ,  光ルミネセンス ,  特性評価