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J-GLOBAL ID:201902273208930305   Reference number:19A0863036

Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure

MOVPE成長GaAs:Nδドープ超格子構造における無放射再結合中心の光ルミネセンス特性評価【JST・京大機械翻訳】
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Volume: 89  Page: 521-527  Publication year: 2019 
JST Material Number: W0468A  ISSN: 0925-3467  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Nonradiative recombination (NR...
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Luminescence of semiconductors 

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