Art

J-GLOBAL ID：201902273630637762   Reference number：19A0645578

Electron Scattering from Disordered Grain Boundaries in Degenerate Polycrystalline Al-Doped ZnO Thin Films

縮退した多結晶AlドープZnO薄膜における無秩序粒界からのElectron散乱【JST・京大機械翻訳】

Author (3)： Minami Tadatsugu (Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan) ,  Miyata Toshihiro (Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan) ,  Tokunaga Hiroki (Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan)
Material： Physica Status Solidi. A. Applications and Materials Science  (Physica Status Solidi. A.)
Volume： 216  Issue： 5  Page： e1700783  Publication year： 2019 
JST Material Number： D0774A  ISSN： 1862-6300  CODEN： PSSABA  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： This paper describes the influ...

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Thesaurus term： wetting (humidity) ,  thin film growth ,  *grain boundary ,  *thin film ,  *polycrystal ,  sputtered deposition ,  electron scattering ,  *degeneracy ,  crystal grain ,  carrier density ,  mobility (ratio) ,  potential barrier ,  Anderson localization ,  *crystal ,  *scattering ,  carrier transport

Author keywords (6)： Anderson localization ,  Al-doped ZnO ,  AZO ,  carrier transport ,  electron scattering ,  thin films

JST classification (2)： Electric conduction in crystalline semiconductors  (BM03043X) ,  Oxide thin films  (BK14050P)

Terms in the title (6)： 縮退 ,  多結晶 ,  AlドープZnO ,  薄膜 ,  粒界 ,  散乱