Art

J-GLOBAL ID：201902287319912566   Reference number：19A0626043

Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy

分子ビームエピタクシーによるGaP成長に対するGa吸着原子拡散長の評価【JST・京大機械翻訳】

Author (8)： Piedra-Lorenzana Jose A. (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Yamane Keisuke (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Shiota Koki (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Fujimoto Junya (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Tanaka Shunsuke (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Sekiguchi Hiroto (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Okada Hiroshi (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Wakahara Akihiro (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 512  Page： 37-40  Publication year： 2019 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： In this work Ga adatom incorpo...

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Thesaurus term： anisotropy ,  *gallium phosphide ,  *diffusion length ,  *gallium ,  *adsorption ,  facet ,  band plate ,  *MBE growth ,  pattern formation ,  one dimension ,  RHEED ,  semiconductor ,  substrate(plate)
Semi thesaurus term： 成長モデル ,  *吸着原子 , 【Automatic Indexing@JST】

Author keywords (4)： A1. Adsorption ,  A3. Molecular beam epitaxy ,  B1. Phosphide ,  B2. Semiconducting III-V materials

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (7)： 分子ビームエピタクシー ,  GAP ,  成長 ,  Ga ,  吸着原子 ,  拡散長 ,  評価