Art

J-GLOBAL ID：201902287914153107   Reference number：19A2652292

Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides

二酸化バナジウムと遷移金属ジカルコゲナイドの接触における障壁形成【JST・京大機械翻訳】

Author (11)： Yamamoto Mahito (Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan) ,  Nouchi Ryo (Graduate School of Engineering, Osaka Prefecture University, Osaka, Japan) ,  Nouchi Ryo (JST PRESTO, Saitama, Japan) ,  Kanki Teruo (Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan) ,  Nakaharai Shu (National Institute for Materials Science, Ibaraki, Japan) ,  Hattori Azusa N. (Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan) ,  Watanabe Kenji (National Institute for Materials Science, Ibaraki, Japan) ,  Taniguchi Takashi (National Institute for Materials Science, Ibaraki, Japan) ,  Wakayama Yutaka (National Institute for Materials Science, Ibaraki, Japan) ,  Ueno Keiji (Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Japan) ,  Tanaka Hidekazu (Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan)
Material： ACS Applied Materials & Interfaces  (ACS Appl Mater Interfaces)
Volume： 11  Issue： 40  Page： 36871-36879  Publication year： 2019 
JST Material Number： W2329A  ISSN： 1944-8244  CODEN： AAMICK  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Phase-transition field-effect ...

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Thesaurus term： contact resistance ,  heterojunction ,  channel ,  *phase transition ,  carrier injection ,  electric current ,  transistor ,  Fermi level ,  semiconductor ,  switching ,  FET ,  interface(surface)
Semi thesaurus term： セレン化タングステン ,  二硫化モリブデン ,  *二酸化バナジウム , 【Automatic Indexing@JST】

Author keywords (7)： vanadium dioxide ,  transition-metal dichalcogenides ,  MoS₂ ,  WSe₂ ,  field-effect transistors ,  contact engineering ,  Fermi-level pinning

JST classification (1)： Transistors  (NC03070N)

Terms in the title (3)： 二酸化バナジウム ,  遷移金属ジカルコゲナイド ,  障壁