Art

J-GLOBAL ID：201902290286037366   Reference number：19A0140710

Enhanced thermoelectric properties of InSb: Studies on In/Ga doped GaSb/InSb crystals

InSbの増強された熱電特性:In/GaドープGaSb/InSb結晶に関する研究【JST・京大機械翻訳】

Author (5)： Nirmal Kumar V. (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Japan) ,  Hayakawa Y. (Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan) ,  Udono H. (Faculty of Engineering, Ibaraki University, Hitachi, Japan) ,  Inatomi Y. (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Japan) ,  Inatomi Y. (School of Physical Sciences, SOKENDAI (The Graduate University for Advanced Studies), Sagamihara, Japan)
Material： Intermetallics
Volume： 105  Page： 21-28  Publication year： 2019 
JST Material Number： W0672A  ISSN： 0966-9795  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： In/Ga elements were doped in G...

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Thesaurus term： *doping ,  lattice constant ,  intermetallic compound ,  crystal growth ,  thermal conductivity ,  *indium antimonide ,  cubic system ,  *gallium antimonide ,  phonon ,  *Antimony ,  *crystal ,  *Indium ,  charge transfer ,  *Gallium ,  degeneracy

Author keywords (5)： A. Intermetallics ,  B. Thermoelectric properties ,  C. Crystal growth ,  D. Point defect ,  G. Thermoelectric power generation

JST classification (1)： Electrical properties  (WB02010Y)

Terms in the title (8)： InSb ,  増強 ,  熱電特性 ,  Ga ,  ドープ ,  GaSb ,  結晶 ,  研究