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J-GLOBAL ID:202002210088020582   Reference number:20A0783828

Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide

超格子導波路を持つ変成InAs(Sb)/In(Ga,Al)As/GaAs中赤外発光体の構造,電子およびルミネセンス特性に及ぼす設計と応力緩和の影響【JST・京大機械翻訳】
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Material:
Volume: 127  Issue: 12  Page: 125706-125706-6  Publication year: 2020 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Abstract/Point:
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We report on structural and op...
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JST classification (4):
JST classification
Category name(code) classified by JST.
Semiconductor lasers  ,  Optical waveguide,optical fibers,and fiber optics  ,  Laser irradiation effects and damages  ,  Semiconductor thin films 

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