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J-GLOBAL ID:202002210774049299   Reference number:20A0495684

Effect of Active Layer Thickness on Device Performance and Hot Carrier Instability in Metal Induced Crystallized Polycrystalline Silicon Thin-Film Transistors

金属誘起結晶化多結晶シリコン薄膜トランジスタにおけるデバイス性能とホットキャリア不安定性に及ぼす活性層厚さの影響【JST・京大機械翻訳】
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Volume: 2019  Issue: IPFA  Page: 1-4  Publication year: 2019 
JST Material Number: W2441A  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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In this paper, the effect of a...
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Graphic and image processing in general  ,  Antennas 

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