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J-GLOBAL ID：202002225144292854   Reference number：20A0333798

First-principle study of electronic structure and optical properties of SiC nano films

SiCナノ膜の電子構造と光学特性の第一原理研究【JST・京大機械翻訳】

Author (13)： Niu Yanan (College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China) ,  Niu Yanan (Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China) ,  Hu Huijun (Shandong Institute of Aerospace Electronics Technology, No. 513, Aerospace Road, Gaoxin District, Yantai 264003, People’s Republic of China) ,  Zhang Wenshu (College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China) ,  Zhang Wenshu (Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China) ,  Li Jianguo (College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China) ,  Li Jianguo (Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China) ,  Qiao Liqing (College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China) ,  Qiao Liqing (Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China) ,  Dong Nan (College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China) ,  Dong Nan (Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China) ,  Han Peide (College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China) ,  Han Peide (Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China)
Material： Semiconductor Science and Technology  (Semicond Sci Technol)
Volume： 34  Issue： 11  Page： 115015 (6pp)  Publication year： 2019 
JST Material Number： E0503B  ISSN： 0268-1242  CODEN： SSTEET  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： The structure, electronic and ...

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Thesaurus term： *electronic structure ,  band gap ,  Fermi level ,  absorption coefficient ,  *optical property ,  conduction band ,  dielectric function ,  *silicon carbide ,  density functional method ,  first principle
Semi thesaurus term： 紫外領域 ,  消光係数 ,  3C-SiC ,  *ナノ薄膜 , 【Automatic Indexing@JST】

JST classification (1)： Metal-insulator-semiconductor structures  (BM03085X)

Terms in the title (6)： SiC ,  ナノ膜 ,  電子構造 ,  光学特性 ,  第一原理 ,  研究