Art

J-GLOBAL ID：202002225808973487   Reference number：20A1236073

Roles of strain and carrier in silicon oxidation

シリコン酸化におけるひずみとキャリアの役割

Author (5)： Ogawa Shuichi (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Yoshigoe Akitaka (Materials Sciences Research Center, Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo 679-5148, Japan) ,  Tang Jaiyi (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Sekihata Yuki (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Takakuwa Yuji (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 59  Issue： SM  Page： SM0801 (42pp)  Publication year： Jul. 2020 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 文献レビュー  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,  *oxidation ,  *strain ,  *carrier ,  silicon dioxide ,  boundary ,  point defect ,  vacancy ,  dangling bond ,  dissociative adsorption ,  Oxygen ,  thermal expansion coefficient ,  simulation model ,  literature review ,  wafer ,  electron ,  positive hole ,  carrier capture ,  unpaired electron ,  band structure ,  active site ,  semiconductor-insulator boundary ,  distortion by heating ,  reaction model ,  band bending ,  Si wafer
Semi thesaurus term： vacancy ,  Review Literature ,  silicon substrate ,  carrier capture

JST classification (1)： Electronic structure of surfaces  (BM02080J)

Terms in the title (5)： シリコン ,  酸化 ,  ひずみ ,  キャリア ,  役割