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J-GLOBAL ID：202002226534349198   Reference number：20A2007656

Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

高温での窒化ガリウムへの注入プラセオジムの光ルミネセンス特性【JST・京大機械翻訳】

Author (9)： Sato Shin-ichiro (Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan) ,  Deki Manato (Venture Business Laboratory, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan) ,  Nishimura Tomoaki (Research Center of Ion Beam Technology, Hosei University, 3-7-2 Kajino-cho, Koganei, Tokyo 184-0002, Japan) ,  Okada Hiroshi (Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580, Japan) ,  Watanabe Hirotaka (Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601, Japan) ,  Nitta Shugo (Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601, Japan) ,  Honda Yoshio (Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601, Japan) ,  Amano Hiroshi (Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601, Japan) ,  Ohshima Takeshi (Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan)
Material： Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms  (Nuclear Instruments and Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms)
Volume： 479  Page： 7-12  Publication year： 2020 
JST Material Number： H0899A  ISSN： 0168-583X  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Since Rare-Earth (RE) doped Ga...

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Thesaurus term： *high temperature ,  light emission ,  *photoluminescence ,  ion implantation ,  doping ,  crystallinity ,  criticality ,  radiation dose ,  *Praseodymium ,  *gallium nitride ,  emission center ,  displacement damage ,  defect cluster ,  single photon source

Author keywords (5)： Gallium Nitride ,  Rare-earth ions ,  Photoluminescence ,  Ion implantation ,  Radiation damage

JST classification (1)： Luminescence of semiconductors  (BM08092S)

Terms in the title (4)： 窒化ガリウム ,  注入 ,  プラセオジム ,  光ルミネセンス