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J-GLOBAL ID：202002229606305729   Reference number：20A0910399

First Vertically Stacked Tensily Strained Ge_0.98Si_0.02 nGAAFETs with No Parasitic Channel and L_G = 40 nm Featuring Record I_ON = 48 μA at V_OV=V_DS=0.5V and Record G_m,max(μS/μm)/SS_SAT(mV/dec) = 8.3 at V_DS=0.5V

V_OV=V_DS=0.5Vにおける無寄生チャネルとL_g=40nmを特徴とする最初の垂直積層張力歪Ge_0.98Si_0.02NGaAsFET,およびV_DS=0.5Vにおける記録G_m,max(μS/μm)/SS_SAT(MV/DEC)=8.3【JST・京大機械翻訳】

Author (7)： Tu Chien-Te (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Huang Yu-Shiang (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Lu Fang-Liang (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Liu Hsiao-Hsuan (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Lin Chung-Yi (National Taiwan University,Graduate Institute of Photonics and Optoelectronics,Taipei,Taiwan) ,  Liu Yi-Chun (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Liu C. W. (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： IEDM  Page： 29.3.1-29.3.4  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Si incorporation as small as 2...

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Thesaurus term： etching ,  alloy ,  optimization ,  infrared radiation ,  *silicon ,  *germanium ,  doping ,  *tension(force) ,  single shaft ,  channel
Semi thesaurus term： 電子移動度 ,  引張歪 , 【Automatic Indexing@JST】

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (7)： 寄生 ,  チャネル ,  垂直 ,  張力 ,  歪 ,  Max ,  DEC