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J-GLOBAL ID：202002235914703593   Reference number：20A0656555

High-Performance Back-Channel-Etched Thin-Film Transistors with an InGaO/InZnO Stacked Channel

InGaO/InZnO積層チャネルを有する高性能バックチャネルエッチング薄膜トランジスタ【JST・京大機械翻訳】

Author (7)： Zhao Mingjie (Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China) ,  Zhang Zewang (Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China) ,  Zhang Zewang (College of Information Science and Electronic Engineer, Polytechnic Institute, Zhejiang University, Hangzhou, 310058, P. R. China) ,  Xu Yingchao (Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China) ,  Xu Daisheng (Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China) ,  Zhang Jiyan (Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China) ,  Huang Zhangchao (Fujian Key Laboratory of Optoelectronic Technology and Devices, Key Laboratory for Optoelectronic Technology of Fujian Higher Education, Xiamen University of Technology, Xiamen, 361024, P. R. China)
Material： Physica Status Solidi. A. Applications and Materials Science  (Physica Status Solidi. A.)
Volume： 217  Issue： 5  Page： e1900773  Publication year： 2020 
JST Material Number： D0774A  ISSN： 1862-6300  CODEN： PSSABA  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： Back-channel-etched (BCE) thin...

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Thesaurus term： bias ,  electrical characteristic ,  optimization ,  thermal stress ,  *etching ,  electric current ,  acid resistance ,  *thin film transistor ,  contact resistance ,  *channel
Semi thesaurus term： 酸化物半導体 ,  電界効果移動度 ,  ターンオン電圧 ,  閾値電圧 ,  高移動度 , 【Automatic Indexing@JST】

Author keywords (5)： back-channel-etchedstructures ,  InGaO ,  InZnO ,  oxide semiconductors ,  thin-film transistors

JST classification (2)： Transistors  (NC03070N) ,  Oxide thin films  (BK14050P)

Terms in the title (3)： チャネル ,  高性能 ,  薄膜トランジスタ