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J-GLOBAL ID:202002240417694154   Reference number:20A0495679

Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs

1.2kV 19A SiCパワーMOSFETの短絡劣化とその機構に関する研究【JST・京大機械翻訳】
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Volume: 2019  Issue: IPFA  Page: 1-4  Publication year: 2019 
JST Material Number: W2441A  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Transistors  ,  Graphic and image processing in general 
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