Art

J-GLOBAL ID：202002247036054784   Reference number：20A1235650

A new photoreflectance signal possibly due to midgap interface states in buried F-doped SnO₂/TiO₂ junctions

埋め込まれたFドープSnO₂/TiO₂接合におけるミッドギャップ界面状態に起因する新しい光反射信号

Author (4)： Kobayashi Eiichi (Department of Electric and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan) ,  Shimmura Shuhei (Department of Electric and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan) ,  Ito Seigo (Department of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan) ,  Makino Takayuki (Department of Electric and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 59  Issue： SC  Page： SCCB23 (5pp)  Publication year： Feb. 2020 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *tin oxide ,  titanium oxide ,  heterojunction ,  energy gap ,  band gap ,  *surface level ,  *optical reflection ,  anatase ,  thermal decomposition ,  electronic transition ,  valence band ,  phase transition ,  titanium dioxide ,  mid-gap ,  spray pyrolysis ,  optical transition ,  *fluorine-doped tin oxide
Semi thesaurus term： *fluorine-doped tin oxide ,  *interface state ,  valence band ,  optically induced phase transition

JST classification (2)： Oxide thin films  (BK14050P) ,  Semiconductor-semiconductor contacts without Gr.13-15 element compounds  (BM03083P)

Terms in the title (7)： ドープ ,  SnO2 ,  TiO2 ,  ミッドギャップ ,  界面状態 ,  起因 ,  光反射