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J-GLOBAL ID：202002251778365208   Reference number：20A0910402

First Demonstration of Vertical Ge_0.92Sn_0.08/Ge and Ge GAA Nanowire nMOSFETs with Low SS of 66 mV/dec and Small DIBL of 35 mV/V

66MV/DECの低SSと35mV/Vの小さいDIBLを持つ垂直Ge_0.92Sn_0.08/GeとGe GaAナノワイヤnMOSFETの初めての実証【JST・京大機械翻訳】

Author (8)： Liu Mingshan (Peter-Gruenberg-Institute (PGI 9),Forschungszentrum,Juelich,Germany,52428) ,  Scholz Stefan (RWTH Aachen University,School of Electrical Engineering,Aachen,Germany,52074) ,  Mertens Konstantin (Peter-Gruenberg-Institute (PGI 9),Forschungszentrum,Juelich,Germany,52428) ,  Bae Jin Hee (Peter-Gruenberg-Institute (PGI 9),Forschungszentrum,Juelich,Germany,52428) ,  Hartmann Jean-Michel (MINATEC Campus and University of Grenoble Alpes,CEA, LETI,Grenoble,France,38054) ,  Knoch Joachim (RWTH Aachen University,School of Electrical Engineering,Aachen,Germany,52074) ,  Buca Dan (Peter-Gruenberg-Institute (PGI 9),Forschungszentrum,Juelich,Germany,52428) ,  Zhao Qing-Tai (Peter-Gruenberg-Institute (PGI 9),Forschungszentrum,Juelich,Germany,52428)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： IEDM  Page： 29.6.1-29.6.4  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We demonstrate for the first t...

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Thesaurus term： heterojunction ,  etching ,  optimization ,  oxidation ,  contact resistance ,  interchangeability ,  *germanium ,  passivation ,  valence band ,  computer architecture ,  *nanowire ,  complementary metal oxide semiconductor
Semi thesaurus term： *nMOSFET ,  pMOSFET ,  *DIBL , 【Automatic Indexing@JST】

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (8)： DEC ,  SS ,  DIBL ,  垂直 ,  Ge ,  ナノワイヤ ,  nMOSFET ,  実証