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J-GLOBAL ID：202002254272403273   Reference number：20A0597985

High Curie temperature in Eu-doped GaN caused by volume-compensated Ga-vacancy

体積補償Ga空格子点によって引き起こされたEuドープGaNにおける高Curie温度【JST・京大機械翻訳】

Author (5)： Masago Akira (Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan) ,  Shinya Hikari (Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan) ,  Fukushima Tetsuya (Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan) ,  Sato Kazunori (Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan) ,  Katayama-Yoshida Hiroshi (Center for Spintronics Research Network, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan)
Material： AIP Advances (Web)
Volume： 10  Issue： 2  Page： 025216-025216-4  Publication year： 2020 
JST Material Number： U7121A  ISSN： 2158-3226  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： This study computationally dem...

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Thesaurus term： *gallium ,  positive hole ,  *europium ,  ion concentration ,  *gallium nitride ,  *doping ,  gadolinium ,  *Curie temperature
Semi thesaurus term： 二重交換相互作用 ,  室温強磁性 , 【Automatic Indexing@JST】

JST classification (4)： Magnetic properties of metals  (BM06040T) ,  Metallic thin films  (BK14030T) ,  Magnetic properties of inorganic compounds  (BM06060P) ,  Electronic structure of crystalline semiconductors  (BM02060N)

Terms in the title (8)： 体積 ,  補償 ,  Ga ,  空格子点 ,  Eu ,  ドープ ,  GaN ,  Curie温度