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J-GLOBAL ID：202002265034172621   Reference number：20A0451361

Interaction of Ge with single layer GaAs: From Ge-island nucleation to formation of novel stable monolayers

Geと単層GaAsとの相互作用:Ge島核形成から新規安定単分子層の形成まで【JST・京大機械翻訳】

Author (6)： Sozen Y. (Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey) ,  Eren I. (Department of Physics, Izmir Institute of Technology, 35430 Izmir, Turkey) ,  Ozen S. (Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey) ,  Yagmurcukardes M. (Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium) ,  Sahin H. (Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey) ,  Sahin H. (ICTP-ECAR Eurasian Center for Advanced Research, Izmir Institute of Technology, 35430 Izmir, Turkey)
Material： Applied Surface Science  (Appl Surf Sci)
Volume： 505  Page： Null  Publication year： 2020 
JST Material Number： B0707B  ISSN： 0169-4332  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： In this study, reactivity of s...

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Thesaurus term： Raman spectrum ,  *germanium ,  metallicity ,  crystal structure ,  dynamic stability(property) ,  rigidity ,  ultrathin film ,  adsorption ,  crystallization ,  vibrational spectrum ,  *interaction ,  *monomolecular layer ,  *gallium arsenide ,  semiconductor
Semi thesaurus term： ナノスケール , 【Automatic Indexing@JST】

Author keywords (5)： Surface modification ,  Janus single-layers ,  DFT calculations ,  Vibrational properties ,  Elastic properties

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (6)： Ge ,  単層 ,  GaAs ,  相互作用 ,  核形成 ,  単分子層