Art

J-GLOBAL ID：202002269968902213   Reference number：20A1885806

Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits

相補型急勾配トンネル電界効果トランジスタ回路に及ぼすスイッチング電圧の影響【JST・京大機械翻訳】

Author (7)： Kato Kimihiko (National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan) ,  Tanamoto Tetsufumi (Department of Information and Electronic Engineering, Teikyo University, Utsunomiya, Japan) ,  Mori Takahiro (National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan) ,  Morita Yukinori (National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan) ,  Matsukawa Takashi (National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan) ,  Takenaka Mitsuru (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) ,  Takagi Shinichi (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan)
Material： IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)
Volume： 67  Issue： 9  Page： 3876-3882  Publication year： 2020 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Impacts of switching voltage o...

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Thesaurus term： simulation ,  integrated circuit ,  *voltage ,  semiconductor ,  oxide ,  short circuit current ,  switching element ,  leakage current ,  electrical characteristic ,  ring oscillator ,  internet ,  circuit simulation
Semi thesaurus term： ドレイン電流 ,  デバイスシミュレーション ,  ゲート電圧 , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (4)： 急勾配 ,  トンネル ,  電界効果トランジスタ回路 ,  スイッチング