Art
J-GLOBAL ID:202002272482502454
Reference number:20A2212784
Temperature gradient in oxide and compound semiconductor bulk crystal growth
酸化物および化合物半導体バルク結晶成長における温度勾配
Author (3):
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Material:
Volume:
47
Issue:
2
Page:
ROMBUNNO.47-2-05(J-STAGE)
Publication year:
2020
JST Material Number:
F0452C
ISSN:
2188-7268
Document type:
Article
Article type:
解説
Country of issue:
Japan (JPN)
Language:
JAPANESE (JA)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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JST classification (1):
JST classification
Category name(code) classified by JST.
Crystal growth of semiconductors
Reference (19):
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1) S. Matsumura: J. Cryst. Growth, 51 (1981) 41.
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2) M. Kobayashi, T. Tsukada and M. Hozawa: J. Cryst. Growth, 241 (2002) 241.
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3) T. Tsukada, K. Kakinoki, M. Hozawa, N. Imaishi, K. Shimamura and T. Fukuda: J. Cryst. Growth, 180 (1997) 543.
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4) K. Kakimoto, B. Gao, X. Liu and S. Nakano: Prog. Cryst. Growth Charact. Mater., 62 (2016) 273.
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5) K. Jiptner, B. Gao, H. Harada, Y. Miyamura, M. Fukuzawa, K. Kakimoto and T. Sekiguchi: J. Cryst. Growth, 408 (2014) 19.
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Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.
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