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J-GLOBAL ID：202002272920761808   Reference number：20A0950882

Photoelectroscopic Study of Mn Barrier Layer on SiO₂ for Si Wafer Bonding Process

Siウエハ接合プロセスのためのSiO_2上のMn障壁層の光電子顕微鏡研究【JST・京大機械翻訳】

Author (7)： Nagata Takahiro (International Center for Materials Nanoarchitectonics, National Institute for Materials Science,Tsukuba,Japan) ,  Tsumura Kazumichi (Corporate Research & Development Center, Toshiba corporation,Kawasaki,Japan) ,  Nakamura Kenro (Corporate Research & Development Center, Toshiba corporation,Kawasaki,Japan) ,  Uchida Kengo (Corporate Research & Development Center, Toshiba corporation,Kawasaki,Japan) ,  Kawakita Jin (Research Center for Functional Materials, National Institute for Materials Science,Tsukuba,Japan) ,  Chikyow Toyohiro (National Institute for Materials Science,Research and Services Division of Materials Data and Integrated System,Tsukuba,Japan) ,  Higashi Kazuyuki (Corporate Research & Development Center, Toshiba corporation,Kawasaki,Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： 3DIC  Page： 1-4  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The chemical bonding state of ...

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Thesaurus term： chemical bond ,  annealing(heat treatment) ,  *manganese ,  oxidation-reduction reaction ,  tensile strength ,  X-ray photoelectron spectroscopy ,  plasma treatment
Semi thesaurus term： *シリコンウエハ ,  *バリア層 ,  界面層 ,  *一酸化ケイ素 , 【Automatic Indexing@JST】

JST classification (3)： Speach processing  (JE05000E) ,  Code theory  (ND02030R) ,  Special-purpose arithmetic and control units  (JC04030Y)

Terms in the title (6)： Siウエハ ,  接合プロセス ,  Mn ,  障壁層 ,  光電子顕微鏡 ,  研究