Art

J-GLOBAL ID：202002278694022281   Reference number：20A1884321

Suppression of killer defects in diamond vertical-type Schottky barrier diodes

ダイヤモンド垂直型Schottky障壁ダイオードにおけるキラー欠陥の抑制

Author (6)： Kobayashi Atsushi (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Kobayashi Atsushi (Department of Chemical Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan) ,  Ohmagari Shinya (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Umezawa Hitoshi (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Takeuchi Daisuke (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Saito Takeyasu (Department of Chemical Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 59  Issue： SG  Page： SGGD10 (4pp)  Publication year： Apr. 2020 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *Schottky barrier diode ,  *Diamond ,  *lattice defect ,  layer ,  cathodoluminescence ,  crystallinity ,  buffer layer ,  leakage current ,  current-voltage characteristic ,  doping ,  boron ,  epitaxial layer ,  extended defect ,  *ore ,  *precious stone
Semi thesaurus term： cathode luminescence

JST classification (1)： Diodes  (NC03050R)

Terms in the title (4)： ダイヤモンド ,  垂直型 ,  Schottky障壁ダイオード ,  欠陥