Art

J-GLOBAL ID：202002283080823580   Reference number：20A0388401

Rectifying resistance switching behaviors of SnO₂ microsphere films modulated by top electrodes

トップ電極により変調されたSnO_2ミクロスフェア膜の整流抵抗スイッチング挙動【JST・京大機械翻訳】

Author (8)： Yuan Rongchun (College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China) ,  Xia Weiwei (College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China) ,  Xu Mengxue (College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China) ,  Miao Zhilei (College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China) ,  Wu Shudong (College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China) ,  Zhang Xiuyun (College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China) ,  He Junhui (College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China) ,  Wang Qiang (College of Physical Science and Technology, Yangzhou University, Yangzhou, 225002, China)
Material： Current Applied Physics  (Curr Appl Phys)
Volume： 20  Issue： 3  Page： 431-437  Publication year： 2020 
JST Material Number： W1579A  ISSN： 1567-1739  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Based on the bipolar resistive...

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Thesaurus term： sandwich structure ,  microsphere ,  hydrothermal synthesis ,  memory element ,  interface (surface) ,  prototype ,  Aluminum ,  *rectification (electric) ,  Silver ,  Gold ,  switching behavior ,  metal electrode ,  Fluorine-doped tin oxide glass ,  fluorine-doped tin oxide ,  *resistance switching ,  action and behavior

Author keywords (4)： Rectifying resistance switching ,  SnO2 microspheres film ,  Selfrectifying ,  Metal electrodes

JST classification (2)： Semiconductor integrated circuit  (NC03162T) ,  Memory units  (JC04060F)

Terms in the title (6)： トップ ,  変調 ,  ミクロスフェア ,  整流 ,  抵抗スイッチング ,  挙動