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J-GLOBAL ID：202002287761463962   Reference number：20A2093229

Twin defect-triggered deformations and Bi segregation in GaAs/GaAsBi core-multishell nanowires

GaAs/GaAsBiコア-マルチシェルナノワイヤにおける双晶欠陥誘起変形とBi偏析【JST・京大機械翻訳】

Author (6)： Matsuda Teruyoshi (Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan) ,  Takada Kyohei (Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan) ,  Yano Kohsuke (Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan) ,  Shimomura Satoshi (Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan) ,  Shimizu Yumiko (Toray Research Center, 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan) ,  Ishikawa Fumitaro (Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 117  Issue： 11  Page： 113105-113105-4  Publication year： 2020 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We investigated microstructura...

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Thesaurus term： interface (surface) ,  *twin ,  micro structure ,  *segregation (concentration distribution) ,  *Bismuth ,  *gallium arsenide ,  multiplex ,  nanostructure ,  lattice mismatch ,  *nanowire ,  hetero-structure

JST classification (2)： Luminescence of semiconductors  (BM08092S) ,  Semiconductor thin films  (BK14040E)

Terms in the title (8)： GaAs ,  GaAsBi ,  コア ,  双晶 ,  欠陥 ,  誘起 ,  BI ,  偏析