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J-GLOBAL ID：202002290608848171   Reference number：20A0819034

Metal-Assisted Solid-Phase Crystallization Process for Vertical Monocrystalline Si Channel in 3D Flash Memory

3Dフラッシュメモリにおける垂直単結晶Siチャネルのための金属支援固相結晶化プロセス【JST・京大機械翻訳】

Author (13)： Miyagawa Hidenori (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Fujiwara Makoto (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Mitani Yuichiro (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Obu Tomoyuki (Western Digital Corporation,Yokkaichi,Japan) ,  Aochi Hideaki (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Kusai Haruka (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Takaishi Riichiro (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Kawai Tomoya (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Kamimuta Yuuichi (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Murakami Toshiya (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Ariyoshi Keiko (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Asano Takanori (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan) ,  Goto Masakazu (Kioxia Corporation,Institute of Memory Technology Research & Development,Yokkaichi,Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： IEDM  Page： 28.3.1-28.3.4  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： In order to improve the channe...

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Thesaurus term： *solid phase ,  *three dimension ,  diffraction ,  reliability (property) ,  thin film transistor ,  battery ,  mutual conductance ,  *silicon ,  conductance ,  channel ,  *flash memory ,  *crystallization ,  metal induced lateral crystallization ,  *monocrystal silicon ,  *phase (thermodynamics)
Semi thesaurus term： デバイス特性 , 【Automatic Indexing@JST】

JST classification (3)： Medical image processing  (JE04020T) ,  NMR in general  (BM07041R) ,  Graphic and image processing in general  (JE04010I)

Terms in the title (9)： 3D ,  フラッシュメモリ ,  垂直 ,  単結晶Si ,  チャネル ,  支援 ,  固相 ,  結晶化 ,  プロセス