Art

J-GLOBAL ID：202002290918188342   Reference number：20A0487431

Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi-Phase-Matching Applications

準位相整合応用のための水素化物気相エピタクシーによるGaAs上の配向パターン化ギャップの直接的なheteroepitaxy【JST・京大機械翻訳】

Author (13)： Stromberg Axel (Department of Applied Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, 10691, Stockholm, Sweden) ,  Omanakuttan Giriprasanth (Department of Applied Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, 10691, Stockholm, Sweden) ,  Mu Tangjie (Department of Applied Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, 10691, Stockholm, Sweden) ,  Natesan Pooja Vardhini (Department of Applied Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, 10691, Stockholm, Sweden) ,  Tofa Tajka Syeed (Department of Applied Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, 10691, Stockholm, Sweden) ,  Bailly Myriam (Physics Research Group, Thales Research & Technology, 1 av. A. Fresnel, Palaiseau, 91767, France) ,  Grisard Arnaud (Physics Research Group, Thales Research & Technology, 1 av. A. Fresnel, Palaiseau, 91767, France) ,  Gerard Bruno (Epitaxy and Technology Platforms Group, III-V Lab, 1 av. A. Fresnel, Palaiseau, 91767, France) ,  Jang Hoon (Department of Applied Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, 10691, Stockholm, Sweden) ,  Pasiskevicius Valdas (Department of Applied Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, 10691, Stockholm, Sweden) ,  Laurell Fredrik (Department of Applied Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, 10691, Stockholm, Sweden) ,  Lourdudoss Sebastian (Department of Applied Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, 10691, Stockholm, Sweden) ,  Sun Yan-Ting (Department of Applied Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, 10691, Stockholm, Sweden)
Material： Physica Status Solidi. A. Applications and Materials Science  (Physica Status Solidi. A.)
Volume： 217  Issue： 3  Page： e1900627  Publication year： 2020 
JST Material Number： D0774A  ISSN： 1862-6300  CODEN： PSSABA  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： Heteroepitaxial growth of orie...

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Thesaurus term： temperature dependence ,  *epitaxy ,  terahertz wave ,  *pattern formation ,  domain ,  threading dislocation ,  infrared radiation ,  growth rate ,  precursor(substance) ,  gallium phosphide ,  frequency conversion ,  *gallium arsenide ,  lattice match ,  opening ,  low pressure
Semi thesaurus term： *擬似位相整合 , 【Automatic Indexing@JST】

Author keywords (5)： heteroepitaxy ,  hydride vapor phase epitaxy ,  orientation-patterned GaP ,  quasi-phase-matching ,  wafer-bonded orientation-patterned GaAs

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (7)： 準位相整合 ,  応用 ,  水素化物気相エピタクシー ,  GaAs ,  配向 ,  パターン化 ,  ギャップ