Art

J-GLOBAL ID：202002291411153202   Reference number：20A0148732

Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth

GeSnエピタキシャル成長中のSn表面偏析に及ぼす低温GeSnバッファ層の影響【JST・京大機械翻訳】

Author (5)： Tsukamoto Takahiro (The University of Electro-Communications, Chofu, Tokyo, Japan) ,  Hirose Nobumitsu (National Institute of Information and Communications Technology, Koganei, Tokyo, Japan) ,  Kasamatsu Akifumi (National Institute of Information and Communications Technology, Koganei, Tokyo, Japan) ,  Matsui Toshiaki (National Institute of Information and Communications Technology, Koganei, Tokyo, Japan) ,  Suda Yoshiyuki (Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan)
Material： Electronic Materials Letters
Volume： 16  Issue： 1  Page： 9-13  Publication year： 2020 
JST Material Number： W4309A  ISSN： 1738-8090  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： We investigate the effects of ...

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Thesaurus term： crystallinity ,  *epitaxy ,  *surface segregation ,  Raman spectroscopy ,  *segregation (concentration distribution) ,  *low temperature ,  *buffer layer ,  *tin ,  FWHM ,  Si wafer

Author keywords (5)： GeSn ,  Sputter epitaxy ,  Buffer layer ,  Sn segregation ,  Raman

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (5)： エピタキシャル成長 ,  Sn ,  表面偏析 ,  低温 ,  バッファ層