Art

J-GLOBAL ID：202002292213786537   Reference number：20A2452281

Intermittent growth for InAs quantum dot on GaAs(001)

GaAs(001)上のInAs量子ドットの間欠的成長【JST・京大機械翻訳】

Author (7)： Toujyou Takashi (National Institute of Technology, Anan College, Tokushima 774-0017, Japan) ,  Toujyou Takashi (The University of Electro-Communications, Tokyo 182-8585, Japan) ,  Konishi Tomoya (National Institute of Technology, Anan College, Tokushima 774-0017, Japan) ,  Hirayama Motoi (National Institute of Technology, Anan College, Tokushima 774-0017, Japan) ,  Yamaguchi Koichi (The University of Electro-Communications, Tokyo 182-8585, Japan) ,  Tsukamoto Shiro (National Institute of Technology, Anan College, Tokushima 774-0017, Japan) ,  Tsukamoto Shiro (The University of Milano-Bicocca, Milano 20125, Italy)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 551  Page： Null  Publication year： 2020 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： We performed an intermittent g...

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Thesaurus term： nucleation ,  annealing(heat treatment) ,  surface structure ,  fluctuation ,  *indium ,  *gallium arsenide ,  *indium arsenide ,  atomic structure ,  MBE growth ,  RHEED ,  indium gallium arsenide ,  scanning tunneling microscope ,  *quantum dot
Semi thesaurus term： 表面形態 ,  濡れ層 , 【Automatic Indexing@JST】

Author keywords (6)： A3. Intermittent growth ,  B2. InAs ,  A1. Quantum dot ,  A1. Surface reconstruction ,  A1. Scanning tunneling microscopey ,  A1. Reflection high energy electron diffraction

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (4)： GaAs ,  InAs量子ドット ,  間欠 ,  成長