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J-GLOBAL ID：202002293227404672   Reference number：20A0455275

Effect of twin boundary formation on the growth rate of the GaSb{111} plane

GaSb{111}面の成長速度に及ぼす双晶境界形成の影響【JST・京大機械翻訳】

Author (4)： Shiga Keiji (Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Maeda Kensaku (Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Morito Haruhiko (Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Fujiwara Kozo (Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan)
Material： Acta Materialia  (Acta Mater)
Volume： 185  Page： 453-460  Publication year： 2020 
JST Material Number： A0316A  ISSN： 1359-6454  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： The top surface of a crystal-m...

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Thesaurus term： cooling velocity ,  *growth rate ,  polarity ,  adhesion(surface chemistry) ,  *gallium antimonide ,  grain boundary ,  crystal ,  nucleation ,  *twin ,  *twin boundary ,  crystal growth ,  dangling bond ,  polycrystal ,  interface(surface) ,  semiconductor

Author keywords (5)： Directional solidification ,  Grain growth ,  In situ ,  Semiconductor compounds ,  Twinning

JST classification (1)： Transformation structures,work structures  (WB01030N)

Terms in the title (3)： GaSb ,  成長速度 ,  双晶境界