Rchr
J-GLOBAL ID：202101014277452035   Update date: Feb. 02, 2024

Ozawa Tetsuo

Ozawa Tetsuo | Ozawa Tetsuo
Affiliation and department：
Shizuoka Institute of Science and Technology Faculty of Science and Technology

About Shizuoka Institute of Science and Technology Faculty of Science and Technology


Research theme for competitive and other funds  (6)：
  • 2018 - 2021 Elucidation of AlN conversion layer formation mechanism by nitrogen plasma and single crystal growth by reactive sputtering
  • 2015 - 2018 AlN single crystals growth converted from Al2O3 under atomic nitrogen plasma
  • 2011 - 2013 Liquid phase growth of nitride semiconductors by using plasma mixture of nitrogen and hydrogen
  • 2002 - 2004 Development of Photo-Voltaic Cells using III-V Alloy Semiconductors for Thermo-Photo-Voltaic Applications (2004)
  • 2001 - 2002 赤外光発電デバイスにおける単結晶基板の作製
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Papers (44)：
  • V. Nirmal Kumar, Y. Hayakawa, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, T. Ozawa, Y. Okano, Y. Inatomi. Orientation-dependent dissolution and growth kinetics of InxGa1-xSb by vertical gradient freezing method under microgravity. Journal of Crystal Growth. 2018. 496-497. 15-17
  • Yasuhuro Hayakawa, Velu Nirmal Kumar, Mukannan Arivanandhan, Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose, Kaoruho Sakata, Tetsuo Ozawa, Yasunori Okano, Yuko Inatomi. Effects of Gravity and Crystal Orientation on the Growth of InGaSb Ternary Alloy Semiconductors - Experiments at the International Space Station and on Earth-. INTERNATIONAL JOURNAL OF MICROGRAVITY SCIENCE AND APPLICATION. 2017. 34. 1
  • Hayakawa Yasuhiro, Nirmal Kumar Velu, Arivanandhan Mukannan, Tadanobu Koyama, Yoshimi Momose, Kaoruho Sakata, Tetsuo Ozawa, Yasunori Okano, Yuko Inatomi. Growth of InGaSb ternary alloys from Ga and Sb faces of GaSb(111) seed under prolonged microgravity at the International Space Station. JSAP Annual Meetings Extended Abstracts. 2016. 2016.2. 3048-3048
  • Velu Nirmal Kumar, Mukannan Arivanandhan, Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose, Kaoruho Sakata, Tetsuo Ozawa, Yasunori Okano, Yuko Inatomi, Yasuhiro Hayakawa. Investigation of directionally solidified ingasb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the international space station. npj Microgravity. 2016. 2. 16026-16026
  • Muthusamy Omprakash, Mukannan Arivanandhan, Tadanobu Koyama, Yoshimi Momose, Hiroya Ikeda, Hirokazu Tatsuoka, Dinesh K. Aswal, Shovit Bhattacharya, Yasunori Okano, Tetsuo Ozawa, et al. High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method. Crystal Growth and Design. 2015. 15. 3. 1380-1388
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MISC (139)：
  • 早川泰弘, KUMAR V. Nirmal, RAJESH G., ARIVANANDHAN M., 小山忠信, 百瀬与志美, 阪田薫穂, 小澤哲夫, 岡野泰則, 稲富裕光. 微小重力環境下における混晶半導体バルク結晶成長. 日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM). 2018. 31st
  • Nirmal Kumar V., Arivanandhan M., Rajesh G., Koyama T., Sakata K., Momose Y., Ozawa T., Okano Y., Inatomi Y., Hayakawa Y. Gravity effect on the properties of In[x]Ga[l-x]Sb ternary alloys grown at the International Space Station : In[x]Ga[l-x]Sb growth at the International Space Station (シリコン材料・デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2016. 116. 50. 55-59
  • Hayakawa Yasuhiro, Inatomi Yuko, Okano Yasunori, Arafune Kouji, Arivanandhan Mukannan, Ozawa Tetsuo, Kinosita Kyouichi, Arai Yasukoto, Tsukada Takao, Kubo Masaki, et al. Activity Report of Research Group on Bulk Crystal Growth. 2015. 29. 48-52
  • Hayakawa Yasuhiro, Inatomi Yuko, Sakata Kaoruho, Ishikawa Takehiko, Takayanagi Masahiro, Kamigaichi Shigeki, Arivanandhan Mukannan, Kumar Velu Nirmal, Rajesh Govindasamy, Koyama Tadanobu, et al. Growth of Alloy Semiconductor Crystals under Microgravity at the International Space Station. 2015. 29. 44-47
  • 小林 哲夫, 吉江 弘正. クスリとペリオの意外な関係 : 医科の治療薬を理解してペリオにアプローチする(第1回)関節リウマチ治療薬服用患者への歯科的アプローチ. 日本歯科評論. 2015. 75. 1. 115-125
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Patents (1)：
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