Art

J-GLOBAL ID：202102243315103597   Reference number：21A0132144

Co-Design of Binary Processing in Memory ReRAM Array and DNN Model Optimization Algorithm

メモリReRAMアレイとDNNモデル最適化アルゴリズムにおける二値処理のコデザイン

Author (2)： GUAN Yue (Graduate School of Information, Production and Systems, Waseda University) ,  OHSAWA Takashi (Graduate School of Information, Production and Systems, Waseda University)
Material： IEICE Transactions on Electronics (Web)  (IEICE Trans Electron (Web))
Volume： E103.C  Issue： 11  Page： 685-692(J-STAGE)  Publication year： 2020 
JST Material Number： U0468A  ISSN： 1745-1353  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *RAM ,  electric resistance ,  *neural network(biomodel) ,  optimization method ,  *system design ,  artificial intelligence ,  automatic language processing ,  Von Neumann algebra ,  current source equivalent circuit ,  hardware design ,  sense amplifier ,  binary logic
Semi thesaurus term： *resistance random access memory ,  *co-design ,  optimal algorithm ,  *deep neural network ,  current mirror

Author keywords (3)： neuromorphic ReRAM ,  binary neural network ,  fabrication fluctuation

JST classification (1)： Digital computer systems in general  (JC02010O)

Reference (14)：

• [1] Y. Guan and T. Ohsawa, “Co-design of DNN model optimization for binary ReRAM array in-memory processing,” 2019 IEEE 11th International Memory Workshop (IMW), pp.1-4, 2019. 10.1109/imw.2019.8739722
• [2] Y. LeCun, Y. Bengio, and G. Hinton, “Deep learning,” Nature, vol.521, no.7553, pp.436-444, 2015. 10.1038/nature14539
• [3] P.L. Bartlett, “The sample complexity of pattern classification with neural networks: the size of the weights is more important than the size of the network,” IEEE Trans. Inf. Theory, vol.44, no.2, pp.525-536, 1998. 10.1109/18.661502
• [4] S. Mittal, “A survey of ReRAM-based architectures for processing-in-memory and neural networks,” Machine Learning and Knowledge Extraction, vol.1, no.1, pp.75-114, 2018. 10.3390/make1010005
• [5] H. Akinaga and H. Shima, “Resistive random access memory (ReRAM) based on metal oxides,” Proc. IEEE, vol.98, no.12, pp.2237-2251, 2010. 10.1109/jproc.2010.2070830

Terms in the title (6)： ReRAM ,  アレイ ,  モデル ,  最適化アルゴリズム ,  二値 ,  コデザイン