Art

J-GLOBAL ID：202102250153907312   Reference number：21A0382233

RF-MBE growth and orientation control of GaN on epitaxial graphene

エピタキシャルグラフェン上のGaNのRF-MBE成長と配向制御【JST・京大機械翻訳】

Author (7)： Bhuiyan Ashraful G. (Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan) ,  Bhuiyan Ashraful G. (Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh) ,  Kamada Yuta (Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan) ,  Islam Md. Sherajul (Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh) ,  Syamoto Riku (Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan) ,  Ishimaru Daiki (Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan) ,  Hashimoto Akihiro (Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan)
Material： Results in Physics
Volume： 20  Page： Null  Publication year： 2021 
JST Material Number： W3368A  ISSN： 2211-3797  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： GaN is proven as the most impo...

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Thesaurus term： epitaxy ,  single crystal ,  semiconductor ,  nitride ,  two dimension ,  aluminum nitride ,  *gallium nitride ,  heteroepitaxy ,  homoepitaxy
Semi thesaurus term： 界面応力 ,  *配向制御 ,  サファイア基板 ,  高品質 ,  エピタキシャル層 ,  結晶シリコン , 【Automatic Indexing@JST】

Author keywords (6)： GaN ,  Epitaxial graphene ,  RF-MBE ,  AlN intermediate layer ,  AFM ,  Raman

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (5)： エピタキシャルグラフェン ,  GaN ,  RF-MBE ,  成長 ,  配向制御