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J-GLOBAL ID：202102257758294431   Reference number：21A0577152

Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

無接合FinFETにおけるランダム電信雑音を引き起こす単一荷電欠陥の物理的モデリングへの寄与【JST・京大機械翻訳】

Author (6)： Atamuratov Atabek E. (Department of Physics, Urgench State University, Kh.Olimjan str.,14, 220100 Urgench, Uzbekistan) ,  Khalilloev Mahkam M. (Department of Physics, Urgench State University, Kh.Olimjan str.,14, 220100 Urgench, Uzbekistan) ,  Yusupov Ahmed (Department of Electronics, Tashkent University of Information Technologies, A.Temur str.,108, 100200 Tashkent, Uzbekistan) ,  Garcia-Loureiro A. J. (Department of Computational electronics, University of Santiago de Compostela, Praza do Obradoiro, 15782 Santiago de Compostela, Spain) ,  Chedjou Jean Chamberlain (Department of Transportation informatics, University of Klagenfurt, 9020 Klagenfurt, Austria) ,  Kyandoghere Kyamakya (Department of Transportation informatics, University of Klagenfurt, 9020 Klagenfurt, Austria)
Material： Applied Sciences (Web)
Volume： 10  Issue： 15  Page： 5327  Publication year： 2020 
JST Material Number： U7135A  ISSN： 2076-3417  Document type： Article
Article type： 原著論文  Country of issue： Switzerland (CHE)  Language： ENGLISH (EN)

Abstract/Point： In this paper, different physi...

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Thesaurus term： interface(surface) ,  *noise(signal) ,  bonding and joining ,  electric charge ,  semiconductor ,  oxide ,  FET ,  oxidized layer
Semi thesaurus term： サブ閾値 ,  *FinFET ,  物理モデル ,  局在化 ,  酸化物半導体 ,  *電信雑音 ,  *荷電欠陥 , 【Automatic Indexing@JST】

Author keywords (5)： single defect ,  random telegraph noise ,  Junctionless FinFET ,  oxide layer ,  oxide-semiconductor interface

JST classification (1)： Transistors  (NC03070N)

Reference (30)：

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Terms in the title (5)： FinFET ,  電信雑音 ,  荷電欠陥 ,  物理 ,  モデリング