Art

J-GLOBAL ID：201502207485677520   Reference number：15A1088803

Anisotropy of strain relaxation in heterogeneous GaInNAs layers grown by AP-MOVPE

AP-MOVPEによって成長したGaInNAs不均質層における歪み緩和の異方性

Author (5)： GELCZUK L. (Fac. of Microsystem Electronics and Photonics, Wroclaw Univ. of Technol., Janiszewskiego 11/17 50-372 Wroclaw, POL) ,  PUCICKI D. (Fac. of Microsystem Electronics and Photonics, Wroclaw Univ. of Technol., Janiszewskiego 11/17 50-372 Wroclaw, POL) ,  SERAFINCZUK J. (Fac. of Microsystem Electronics and Photonics, Wroclaw Univ. of Technol., Janiszewskiego 11/17 50-372 Wroclaw, POL) ,  DABROWSKA-SZATA M. (Fac. of Microsystem Electronics and Photonics, Wroclaw Univ. of Technol., Janiszewskiego 11/17 50-372 Wroclaw, POL) ,  DLUZEWSKI P. (Inst. of Physics, Polish Acad. of Sci., Al. Lotnikow 32/46, Warsaw 02-668, POL)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 430  Page： 14-20  Publication year： Nov. 15, 2015 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *MOCVD ,  relaxation phenomenon ,  anisotropy ,  gallium arsenide ,  *arsenide ,  *nitride ,  *gallium compound ,  *indium compound ,  compound semiconductor ,  semiconductor thin film ,  device structure ,  transmission electron microscope ,  structure ,  heterogeneity ,  *mismatch dislocation ,  *band structure ,  lattice constant
Semi thesaurus term： metal organic vapor phase epitaxy ,  strain relaxation ,  hetero-structure ,  cross-sectional transmission electron microscope ,  layer structure ,  misfit dislocation ,  lattice parameter

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (6)： Ap ,  MOVPE ,  成長 ,  GaInNAs ,  歪み緩和 ,  異方性