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J-GLOBAL ID：200901017549738808   Update date: Sep. 13, 2022

Saraie Junji

サライエ ジュンジ | Saraie Junji
Affiliation and department：
Former Institution / Organization Kyoto Institute of Technology Graduate School of Science and Technology

About Former Institution / Organization Kyoto Institute of Technology Graduate School of Science and Technology


Job title： Professor
Research field  (3)： Electronic devices and equipment ,  Electric/electronic material engineering ,  Semiconductors, optical and atomic physics
Research keywords  (6)： 結晶成長 ,  光デバイス ,  ナノ構造 ,  crystal growth ,  optoelectronic devices ,  nanostructure
Research theme for competitive and other funds  (14)：
  • シリコン窒化膜の作製とメモリーデバイスへの応用
  • 光通信用赤外および緑色半導体レーザの研究
  • 化合物半導体の結晶成長
  • GaNAsBiのMBE成長
  • Si上の極薄絶縁膜
Show all
MISC (113)：
ｍore...
Books (14)：
  • MBE growth of InN on Si toward hole-barrier structure in Si devices
    IPAP Conf.Series 1, 2000
  • MBE growth of InN on Si toward hole-barrier structure in Si devices
    IPAP Conf.Series 1, 2000
  • Topmost surface analysis of 6H-SiC (0001) by coaxial impact collision ion scattaring spectroscopy
    Inst. Phys. Conf. Ser. 1996
  • Growth of cubic SiC on Si substrate by CVD using Hexa-methyldisilane and hexachlorodisilane
    Inst. Phys. Conf. Ser. 1996
  • Sublimation growth of cubic SiC bulk
    Inst. Physics Conf. Ser. 1996
ｍore...
Education (4)：
  • - 1968 Kyoto University
  • - 1968 Kyoto University Graduate School, Division of Engineering
  • - 1966 Kyoto University Faculty of Engineering
  • - 1966 Kyoto University Faculty of Engineering
Professional career (3)：
  • Doctor of Engineering (Kyoto University)
  • Master of Engineering (Kyoto University)
  • Bachelor of Engineering (Kyoto University)
Committee career (2)：
  • 1999 - 応用物理学会 理事
  • 1999 - Japan Society of Applied Physics Director
Association Membership(s) (7)：
日本材料学会 ,  応用物理学会 ,  電子情報通信学会 ,  Society of Material Science, Japan ,  Japan Society of Applied Physics ,  Information and Communication Engineers ,  The Institute of Electronics
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