Rchr
J-GLOBAL ID：200901047081760874
Update date: Feb. 01, 2024
Maeda Tatsurou
マエダ タツロウ | Maeda Tatsurou
Affiliation and department：
Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T03996522
Research field (1)：
Electronic devices and equipment
Research theme for competitive and other funds (5)：
- 2020 - 2023 自由空間電子走行型光電変換デバイスの創生とテラヘルツ波パルスビームの実現
- 2017 - 2022 Precise structure control of 3-dimensional integration CMOS using high mobility materials through layer transfer
- 2015 - 2019 High quality bulk-SiGe single-crystal growth methods for high-speed CPU
- 2012 - 2015 Valence-band engineering and interface-dipole control for realizing III-V pMOSFET
- 2012 - 2015 Study of all nitride gate stack with Metal and Insulator HfNx for high mobility channel
Papers (123)：
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Tatsuro Maeda, Kazuaki Oishi, Hiroto Ishii, Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu, Akira Endoh, Hiroki Fujishiro, Takashi Koida. Schottky barrier contact on In0.53Ga0.47As with short-wave infrared transparent conductive oxide. Applied Physics Letters. 2022. 121. 23. 232102-232102
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Hiroto Ishii, Wen Hsin Chang, Hiroyuki Ishii, Mengnan Ke, Tatsuro Maeda. Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases. Japanese Journal of Applied Physics. 2022. 61. SD
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Hiroto Ishii, Wen-Hsin Chang, Hiroyuki Ishii, Mengnan Ke, Tatsuro Maeda. Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases. JAPANESE JOURNAL OF APPLIED PHYSICS. 2022. 61. SD
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Wen Hsin Chang, Hsien-Wen Wan, Yi-Ting Cheng, Yen-Hsun G. Lin, Toshifumi Irisawa, Hiroyuki Ishii, Jueinai Kwo, Minghwei Hong, Tatsuro Maeda. Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure. Japanese Journal of Applied Physics. 2022. 61. SC. SC1024-SC1024
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Tatsuro Maeda, Kazuaki Oishi, Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu, Akira Endoh, Hiroki Fujishiro, Takashi Koida. High and broadband sensitivity front-side illuminated InGaAs photo field-effect transistors (photoFETs) with SWIR transparent conductive oxide (TCO) gate. Applied Physics Letters. 2021. 119. 19
ｍore...
MISC (39)：
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Yukihiro Imai, Kouta Takahashi, Noriyuki Uchida, Tatsuro Maeda, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa. Domain size effects on thermoelectric properties of p-type Ge0.95Sn0.05 layers grown on GaAs and Si substrates. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. 2018. 310-312
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Invited Talk : Electrical Coupling of Stacked Transistors in Monolithic Three-dimensional Inverters and Its Dependence on the Interlayer Dielectric Thickness. 2017. 116. 450. 23-28
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Oxygen etching technology for 3D Ge channel transistors. 2016. 80. 49-52
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IRISAWA Toshifumi, ODA Minoru, IKEDA Keiji, MORIYAMA Yoshihiko, MIEDA Eiko, JEVASUWAN Wipakorn, MAEDA Taturou, ICHIKAWA Osamu, OSADA Takenori, HATA Masahiko, et al. High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth. Technical report of IEICE. SDM. 2014. 113. 420. 9-12
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GOTOW Takahiro, FUJIKAWA Sachie, FUJISHIRO Hiroki I., OGURA Mutuo, YASUDA Tetsuji, MAEDA Tatsuro. Effect of Vacuum Annealing on Al_2O_3/GaSb MOS Interfaces. IEICE technical report. Electron devices. 2013. 113. 176. 37-42
ｍore...
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