Effects of annealing on ZnS:Tb, F electroluminescent thin films prepared by rf magnetron sputtering.

MITA J; KOIZUMI M; KANNO H; HAYASHI T; SEKIDO Y; ABIKO I; NIHEI K

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J-GLOBAL ID：200902001873064879 Reference number：88A0017963

Effects of annealing on ZnS:Tb, F electroluminescent thin films prepared by rf magnetron sputtering.

rfマグネトロンスパッタリングで作製したZnS:Tb,Fエレクトロルミネセンス薄膜に及ぼすアニーリングの影響

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Material：
Volume： 26 Issue： 5 Page： L558-L560 Publication year： May. 1987
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films , Electronic structure of impurites and defects

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