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ArticleJ-GLOBAL ID:200902015546162337整理番号:87A0434621

Molecular-beam epitaxial growth of (Al, Ga) As/GaAs heterostructures with interruption at interfaces.

界面での成長断続法による(Al,Ga)As/GaAsヘテロ構造の分子ビームエピタキシャル成長

著者:TU C W(AT&T Bell Lab., NJ, USA)、MILLER R C(AT&T Bell Lab., NJ, USA)、WILSON B A(AT&T Bell Lab., NJ, USA)・・・
資料名:Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures 巻:5 号:3 ページ:716-717
発行年:1987年05月
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