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ArticleJ-GLOBAL ID:200902212375640456整理番号:08A0251953

Nonvolatile memories of Ge nanodots self-assembled by depositing ultrasmall amount Ge on SiO2 at room temperature

室温でSiO2にごく少量のGeを蒸着することによって自己集合したGeナノドットの不揮発性メモリ

著者:HONG Seung Hui(Dep. of Physics and Applied Physics, Coll. of Electronics and Information, Kyung Hee Univ., Yongin 449-701, KOR)、KIM Min Choul(Dep. of Physics and Applied Physics, Coll. of Electronics and Information, Kyung Hee Univ., Yongin 449-701, KOR)、JEONG Pil Seong(Dep. of Physics and Applied Physics, Coll. of Electronics and Information, Kyung Hee Univ., Yongin 449-701, KOR)・・・
資料名:Appl Phys Lett 巻:92 号:9 ページ:093124
発行年:2008年03月03日
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