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ArticleJ-GLOBAL ID:200902212438452337整理番号:09A0458489

The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal-Oxide-Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

チャネルのホットキャリアストレスを与えた後の原子層堆積HfSiONゲート金属‐酸化物‐半導体電界効果トランジスタに及ぼすHf濃度の影響

著者:CHEN Shuang‐Yuan(National Taipei Univ. Technol., Taipei, TWN)、CHEN Hung‐Wen(National Taipei Univ. Technol., Taipei, TWN)、LIU Chuan‐Hsi(National Taiwan Normal Univ., Taipei, TWN)・・・
資料名:Jpn J Appl Phys 巻:48 号:4,Issue 2 ページ:04C009.1-04C009.4
発行年:2009年04月25日
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