Rchr

J-GLOBAL ID：201401018065999778 Update date: Sep. 04, 2022

Toyoda Satoshi

トヨダサトシ | Toyoda Satoshi

Affiliation and department：

Research field (2)： Quantum beam science , Thin-film surfaces and interfaces

Research keywords (5)：最大エントロピー法 , 界面 , 放射光 , 半導体 , 光電子分光

Papers (7)：

K. Shigematsu, A. Chikamatsu, T. Fukumura, S. Toyoda, E. Ikenaga, T. Hasegawa. Sr2MgMoO6-delta thin films fabricated using pulsed-laser deposition with high concentrations of oxygen vacancies. APPLIED PHYSICS LETTERS. 2014. 104. 26
Nakamura A., Shimojima T., Sonobe T., Ideta S., Malaeb Walid, Shin S., Toyoda S., Horiba K., Kumigashira H., Ono K., et al. 28aCE-7 Photoemission spectroscopy on LaFeAsO_<1-x>H_x III. Meeting abstracts of the Physical Society of Japan. 2014. 69. 1. 586-586
Masatsugu Oishi, Tetsu Ichitsubo, Shinya Okamoto, Satoshi Toyoda, Eiichiro Matsubara, Toshiyuki Nohira, Rika Hagiwara. Electrochemical Behavior of Magnesium Alloys in Alkali Metal-TFSA Ionic Liquid for Magnesium-Battery Negative Electrode. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2014. 161. 6. A943-A947
Analysis of interfacial electronic states in MOSFET gate stack structures by synchrotron radiation photoemission spectroscopy. 2013. 24. 6. 722-726
永村直佳, 豊田智史, 黒角翔大, 篠原稔宏, 堀場弘司, 尾嶋正治, 井出隆之, 吹留博一, 末光眞希, 長汐晃輔, et al. 29aXP-6 3次元nanoESCAを用いたグラフェンデバイス構造の実空間界面電子状態分析(29aXP 領域7,領域4合同グラフェン(分光・構造),領域7(分子性固体・有機導体)). 日本物理学会講演概要集. 2013. 68. 1

ｍore...

MISC (3)：

H. Ofuchi, S. Toyoda, K. Ikeda, G. L. Liu, Z. Liu, M. Oshima. Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure. 14TH INTERNATIONAL CONFERENCE ON X-RAY ABSORPTION FINE STRUCTURE (XAFS14), PROCEEDINGS. 2009. 190
T. Ando, T. Hirano, K. Tai, S. Yamaguchi, K. Tanaka, I. Oshiyama, M. Nakata, K. Watanabe, R. Yamamoto, S. Kanda, et al. High performance and high reliability dual metal CMOS gate stacks using novel high-k Bi-layer control technique. International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2007
H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G.L. Liu, Z. Liu, K. Usuda. Annealing-induced interfacial reactions between gate electrodes and HfO₂/Si gate stacks studied by synchrotron radiation photoemission spectroscopy. AIP Conference Proceedings. 2007. 879. 1569-1572

Education (4)：

2005 - 2007 The University of Tokyo The Graduate School of Engineering Department of Applied Chemistry
2003 - 2005 The University of Tokyo The Graduate School of Engineering Department of Applied Chemistry
2001 - 2003 The University of Tokyo The Faculty of Engineering Department of Applied Chemistry
1999 - 2001 The University of Tokyo College of Arts and Sciences

Professional career (1)：

博士(工学) (東京大学)

Work history (5)：

2013/04 - 現在 Kyoto University Graduate School of Engineering, Deprtment of Materical Science and Engineering
2012/10 - 2013/03 High Energy Accelerator Research Organization
2011/04 - 2012/09 The University of Tokyo Organization for Synchrotron Radiation Research
2008/04 - 2011/03 The University of Tokyo The Graduate School of Engineering, Department of Applied Chemistry
2007/10 - 2008/03 The University of Tokyo The Graduate School of Engineering, Department of Applied Chemistry

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